English
Spain
Rusia
Italy
ChinaTK10V60W,LVQ
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
TK10V60W,LVQ
BESCHREIBUNG
MOSFET N-CH 600V 9.7A 4DFN
DETAILIERTE BESCHREIBUNG
N-Channel 600 V 9.7A (Ta) 88.3W (Tc) Surface Mount 4-DFN-EP (8x8)
HERSTELLER
Toshiba Semiconductor and Storage
STANDARD LEADTIME
52 Weeks
EDACAD-MODELL
TK10V60W,LVQ Models
STANDARDPAKET
2,500
Lagerbestände
Technische Daten
Mfr
Toshiba Semiconductor and Storage
Series
DTMOSIV
Package
Tape & Reel (TR)
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
9.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
380mOhm @ 4.9A, 10V
Vgs(th) (Max) @ Id
3.7V @ 500µA
Gate Charge (Qg) (Max) @ Vgs
20 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
700 pF @ 300 V
FET Feature
-
Power Dissipation (Max)
88.3W (Tc)
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
4-DFN-EP (8x8)
Package / Case
4-VSFN Exposed Pad
Base Product Number
TK10V60
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
TK10V60WLVQTR
TK10V60WLVQCT
TK10V60W,LVQ(S
TK10V60WLVQDKR
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Toshiba Semiconductor and Storage TK10V60W,LVQ
Dokumente und Medien
Datasheets
1(TK10V60W)
Featured Product
1(Server Solutions)
EDA Models
1(TK10V60W,LVQ Models)
Menge Preis
QUANTITÄT: 5000
Einzelpreis: $1.5125
Verpackung: Tape & Reel (TR)
MinMultiplikator: 2500
Verpackung: Tape & Reel (TR)
MinMultiplikator: 2500
QUANTITÄT: 2500
Einzelpreis: $1.57651
Verpackung: Tape & Reel (TR)
MinMultiplikator: 2500
Verpackung: Tape & Reel (TR)
MinMultiplikator: 2500
Stellvertreter
-