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ChinaBCR196WE6327
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TEILNUMMER DES HERSTELLERS
BCR196WE6327
BESCHREIBUNG
TRANS PREBIAS PNP 50V SOT323-3
DETAILIERTE BESCHREIBUNG
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 70 mA 150 MHz 250 mW Surface Mount PG-SOT323-3
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
15,000
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
-
Package
Bulk
Product Status
Active
Transistor Type
PNP - Pre-Biased
Current - Collector (Ic) (Max)
70 mA
Voltage - Collector Emitter Breakdown (Max)
50 V
Resistor - Base (R1)
47 kOhms
Resistor - Emitter Base (R2)
22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce
50 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic
300mV @ 500µA, 10mA
Current - Collector Cutoff (Max)
100nA (ICBO)
Frequency - Transition
150 MHz
Power - Max
250 mW
Mounting Type
Surface Mount
Package / Case
SC-70, SOT-323
Supplier Device Package
PG-SOT323-3
Base Product Number
BCR196
Umweltverträgliche Exportklassifikationen
RoHS Status
Not applicable
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.21.0075
Andere Namen
2156-BCR196WE6327
INFINFBCR196WE6327
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors/Infineon Technologies BCR196WE6327
Dokumente und Medien
Datasheets
1(BCR196WH6327XTSA1)
Menge Preis
QUANTITÄT: 15000
Einzelpreis: $0.02
Verpackung: Bulk
MinMultiplikator: 15000
Verpackung: Bulk
MinMultiplikator: 15000
Stellvertreter
-