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ChinaAPTMC120TAM12CTPAG
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
APTMC120TAM12CTPAG
BESCHREIBUNG
SIC 6N-CH 1200V 220A SP6-P
DETAILIERTE BESCHREIBUNG
Mosfet Array 1200V (1.2kV) 220A (Tc) 925W Chassis Mount SP6-P
HERSTELLER
Microchip Technology
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
Lagerbestände
Technische Daten
Mfr
Microchip Technology
Series
-
Package
Bulk
Product Status
Active
Technology
Silicon Carbide (SiC)
Configuration
6 N-Channel (3-Phase Bridge)
FET Feature
-
Drain to Source Voltage (Vdss)
1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C
220A (Tc)
Rds On (Max) @ Id, Vgs
12mOhm @ 150A, 20V
Vgs(th) (Max) @ Id
2.4V @ 30mA (Typ)
Gate Charge (Qg) (Max) @ Vgs
483nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds
8400pF @ 1000V
Power - Max
925W
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Chassis Mount
Package / Case
SP6
Supplier Device Package
SP6-P
Base Product Number
APTMC120
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/FET, MOSFET Arrays/Microchip Technology APTMC120TAM12CTPAG
Dokumente und Medien
Datasheets
1(APTMC120TAM12CTPAG)
Environmental Information
()
PCN Assembly/Origin
1(Assembly Site 16/Jan/2023)
HTML Datasheet
1(APTMC120TAM12CTPAG)
Menge Preis
-
Stellvertreter
-