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ChinaSTL19N60DM2
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
STL19N60DM2
BESCHREIBUNG
MOSFET N-CH 600V 11A PWRFLAT HV
DETAILIERTE BESCHREIBUNG
N-Channel 600 V 11A (Tc) 90W (Tc) Surface Mount PowerFlat™ (8x8) HV
HERSTELLER
STMicroelectronics
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
3,000
Lagerbestände
Technische Daten
Mfr
STMicroelectronics
Series
MDmesh™ DM2
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
11A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
320mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
21 nC @ 10 V
Vgs (Max)
±25V
FET Feature
-
Power Dissipation (Max)
90W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PowerFlat™ (8x8) HV
Package / Case
8-PowerVDFN
Base Product Number
STL19
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
3 (168 Hours)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-1138-STL19N60DM2CT
497-16361-6
-1138-STL19N60DM2DKR
497-16361-1
497-16361-2
-1138-STL19N60DM2TR
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/STMicroelectronics STL19N60DM2
Dokumente und Medien
Datasheets
1(STL19N60DM2)
Product Training Modules
1(STMicroelectronics ST MOSFETs)
PCN Obsolescence/ EOL
1(Mult Dev OBS 3/Jul/2020)
HTML Datasheet
1(STL19N60DM2)
Menge Preis
QUANTITÄT: 10
Einzelpreis: $2.809
Verpackung: Cut Tape (CT)
MinMultiplikator: 1
Verpackung: Cut Tape (CT)
MinMultiplikator: 1
QUANTITÄT: 1
Einzelpreis: $3.35
Verpackung: Cut Tape (CT)
MinMultiplikator: 1
Verpackung: Cut Tape (CT)
MinMultiplikator: 1
Stellvertreter
Teil Nr. : STB13N60M2
Hersteller. : STMicroelectronics
Verfügbare Menge. : 2,190
Einzelpreis. : $2.25000
Ersatztyp. : Similar
Verfügbare Menge. : 2,190
Einzelpreis. : $2.25000
Ersatztyp. : Similar