Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
ATP106-TL-H
BESCHREIBUNG
MOSFET P-CH 40V 30A ATPAK
DETAILIERTE BESCHREIBUNG
P-Channel 40 V 30A (Ta) 40W (Tc) Surface Mount ATPAK
HERSTELLER
onsemi
STANDARD LEADTIME
EDACAD-MODELL
ATP106-TL-H Models
STANDARDPAKET
3,000

Technische Daten

Mfr
onsemi
Series
-
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
40 V
Current - Continuous Drain (Id) @ 25°C
30A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
25mOhm @ 15A, 10V
Vgs(th) (Max) @ Id
-
Gate Charge (Qg) (Max) @ Vgs
29 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1380 pF @ 20 V
FET Feature
-
Power Dissipation (Max)
40W (Tc)
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
ATPAK
Package / Case
ATPAK (2 Leads+Tab)
Base Product Number
ATP106

Umweltverträgliche Exportklassifikationen

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Andere Namen

869-1075-2
869-1075-1
2156-ATP106-TL-H-OS
ATP106TLH
ONSONSATP106-TL-H
ATP106-SPL
869-1075-6

Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi ATP106-TL-H

Dokumente und Medien

Datasheets
1(ATP106)
Environmental Information
()
PCN Obsolescence/ EOL
1(Mult Dev EOL 7/Apr/2021)
PCN Design/Specification
()
PCN Assembly/Origin
1(Wafer Fab Site Addition 05/May/2015)
HTML Datasheet
1(ATP106)
EDA Models
1(ATP106-TL-H Models)
Product Drawings
1(ATPAK Package P-Channel & N-Channel Top)

Menge Preis

-

Stellvertreter

Teil Nr. : FDD4685
Hersteller. : onsemi
Verfügbare Menge. : 3,284
Einzelpreis. : $1.43000
Ersatztyp. : Similar
Teil Nr. : NP20P04SLG-E1-AY
Hersteller. : Renesas Electronics Corporation
Verfügbare Menge. : 13,470
Einzelpreis. : $1.50000
Ersatztyp. : Direct
Teil Nr. : IXTY48P05T
Hersteller. : IXYS
Verfügbare Menge. : 342
Einzelpreis. : $3.99000
Ersatztyp. : Similar