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TEILNUMMER DES HERSTELLERS
IRFH8316TRPBF
BESCHREIBUNG
MOSFET N-CH 30V 27A/50A 8PQFN
DETAILIERTE BESCHREIBUNG
N-Channel 30 V 27A (Ta), 50A (Tc) 3.6W (Ta), 59W (Tc) Surface Mount 8-PQFN (5x6)
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
4,000
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
HEXFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
27A (Ta), 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
2.95mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
2.2V @ 50µA
Gate Charge (Qg) (Max) @ Vgs
59 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
3610 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
3.6W (Ta), 59W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-PQFN (5x6)
Package / Case
8-PowerTDFN
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
SP001565956
2156-IRFH8316TRPBF
IRFH8316TRPBFDKR
INFINFIRFH8316TRPBF
IRFH8316TRPBFCT
IRFH8316TRPBFTR
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRFH8316TRPBF
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1(IRFH8316PBF)
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1(Data Processing Systems)
PCN Packaging
1(Package Drawing Update 19/Aug/2015)
HTML Datasheet
1(IRFH8316PBF)
Menge Preis
-
Stellvertreter
Teil Nr. : RJK0391DPA-00#J5A
Hersteller. : Renesas Electronics Corporation
Verfügbare Menge. : 6,000
Einzelpreis. : $0.90001
Ersatztyp. : Similar
Verfügbare Menge. : 6,000
Einzelpreis. : $0.90001
Ersatztyp. : Similar