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ChinaAOW4S60
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
AOW4S60
BESCHREIBUNG
MOSFET N-CH 600V 4A TO262
DETAILIERTE BESCHREIBUNG
N-Channel 600 V 4A (Tc) 83W (Tc) Through Hole TO-262
HERSTELLER
Alpha & Omega Semiconductor Inc.
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
1,000
Lagerbestände
Technische Daten
Mfr
Alpha & Omega Semiconductor Inc.
Series
aMOS™
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
900mOhm @ 2A, 10V
Vgs(th) (Max) @ Id
4.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
6 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
263 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
83W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-262
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Base Product Number
AOW4
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Alpha & Omega Semiconductor Inc. AOW4S60
Dokumente und Medien
Datasheets
1(AOW(F)4S60)
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PCN Assembly/Origin
1(Mult Dev Assem/Test Chg 19/Jul/2018)
HTML Datasheet
1(AOW(F)4S60)
Product Drawings
1(TO262 Pkg Drawing)
Menge Preis
-
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