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ChinaIRFH5025TR2PBF
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
IRFH5025TR2PBF
BESCHREIBUNG
MOSFET N-CH 250V 3.8A PQFN
DETAILIERTE BESCHREIBUNG
N-Channel 250 V 3.8A (Ta) Surface Mount 8-PQFN (5x6)
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
IRFH5025TR2PBF Models
STANDARDPAKET
400
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
-
Package
Cut Tape (CT)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
250 V
Current - Continuous Drain (Id) @ 25°C
3.8A (Ta)
Rds On (Max) @ Id, Vgs
100mOhm @ 5.7A, 10V
Vgs(th) (Max) @ Id
5V @ 150µA
Gate Charge (Qg) (Max) @ Vgs
56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
2150 pF @ 50 V
FET Feature
-
Mounting Type
Surface Mount
Supplier Device Package
8-PQFN (5x6)
Package / Case
8-PowerVDFN
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
IRFH5025TR2PBFTR
SP001563928
IRFH5025TR2PBFDKR
IRFH5025TR2PBFCT
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRFH5025TR2PBF
Dokumente und Medien
Datasheets
1(IRFH5025PBF)
Other Related Documents
1(Part Number Guide)
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HTML Datasheet
1(IRFH5025PBF)
EDA Models
1(IRFH5025TR2PBF Models)
Menge Preis
-
Stellvertreter
Teil Nr. : SI7190DP-T1-GE3
Hersteller. : Vishay Siliconix
Verfügbare Menge. : 5,620
Einzelpreis. : $1.97000
Ersatztyp. : Similar
Verfügbare Menge. : 5,620
Einzelpreis. : $1.97000
Ersatztyp. : Similar
Teil Nr. : TPH1110FNH,L1Q
Hersteller. : Toshiba Semiconductor and Storage
Verfügbare Menge. : 11,610
Einzelpreis. : $1.75000
Ersatztyp. : Similar
Verfügbare Menge. : 11,610
Einzelpreis. : $1.75000
Ersatztyp. : Similar