English
Spain
Rusia
Italy
ChinaSIHH21N65E-T1-GE3
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
SIHH21N65E-T1-GE3
BESCHREIBUNG
MOSFET N-CH 650V 20.3A PPAK 8X8
DETAILIERTE BESCHREIBUNG
N-Channel 650 V 20.3A (Tc) 156W (Tc) Surface Mount PowerPAK® 8 x 8
HERSTELLER
Vishay Siliconix
STANDARD LEADTIME
28 Weeks
EDACAD-MODELL
STANDARDPAKET
3,000
Lagerbestände
Technische Daten
Mfr
Vishay Siliconix
Series
-
Package
Tape & Reel (TR)
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
20.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
170mOhm @ 11A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
99 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
2404 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
156W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK® 8 x 8
Package / Case
8-PowerTDFN
Base Product Number
SIHH21
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
SIHH21N65E-T1-GE3DKR
SIHH21N65E-T1-GE3TR
SIHH21N65E-T1-GE3CT
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix SIHH21N65E-T1-GE3
Dokumente und Medien
Datasheets
1(SIHH21N65E)
HTML Datasheet
1(SIHH21N65E)
Menge Preis
QUANTITÄT: 3000
Einzelpreis: $3.09439
Verpackung: Tape & Reel (TR)
MinMultiplikator: 3000
Verpackung: Tape & Reel (TR)
MinMultiplikator: 3000
Stellvertreter
-