Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
IRFI830G
BESCHREIBUNG
MOSFET N-CH 500V 3.1A TO220-3
DETAILIERTE BESCHREIBUNG
N-Channel 500 V 3.1A (Tc) 35W (Tc) Through Hole TO-220-3
HERSTELLER
Vishay Siliconix
STANDARD LEADTIME
EDACAD-MODELL
IRFI830G Models
STANDARDPAKET
1,000

Technische Daten

Mfr
Vishay Siliconix
Series
-
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
500 V
Current - Continuous Drain (Id) @ 25°C
3.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.5Ohm @ 1.9A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
38 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
610 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
35W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220-3
Package / Case
TO-220-3 Full Pack, Isolated Tab
Base Product Number
IRFI830

Umweltverträgliche Exportklassifikationen

RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095

Andere Namen

Q932707
*IRFI830G

Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix IRFI830G

Dokumente und Medien

Datasheets
1(IRFI830G)
HTML Datasheet
1(IRFI830G)
EDA Models
1(IRFI830G Models)

Menge Preis

-

Stellvertreter

Teil Nr. : IRFI830GPBF
Hersteller. : Vishay Siliconix
Verfügbare Menge. : 865
Einzelpreis. : $1.73000
Ersatztyp. : Parametric Equivalent
Teil Nr. : TK5A50D(STA4,Q,M)
Hersteller. : Toshiba Semiconductor and Storage
Verfügbare Menge. : 34
Einzelpreis. : $1.20000
Ersatztyp. : Similar
Teil Nr. : TK5A55D(STA4,Q,M)
Hersteller. : Toshiba Semiconductor and Storage
Verfügbare Menge. : 47
Einzelpreis. : $1.33000
Ersatztyp. : Similar