Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
IXFT32N100XHV
BESCHREIBUNG
MOSFET N-CH 1000V 32A TO268HV
DETAILIERTE BESCHREIBUNG
N-Channel 1000 V 32A (Tc) 890W (Tc) Surface Mount TO-268HV (IXFT)
HERSTELLER
IXYS
STANDARD LEADTIME
47 Weeks
EDACAD-MODELL
STANDARDPAKET

Technische Daten

Mfr
IXYS
Series
HiPerFET™, Ultra X
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
1000 V
Current - Continuous Drain (Id) @ 25°C
32A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
220mOhm @ 16A, 10V
Vgs(th) (Max) @ Id
6V @ 4mA
Gate Charge (Qg) (Max) @ Vgs
130 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
4075 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
890W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-268HV (IXFT)
Package / Case
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Base Product Number
IXFT32

Umweltverträgliche Exportklassifikationen

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
3 (168 Hours)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Andere Namen

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Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/IXYS IXFT32N100XHV

Dokumente und Medien

Datasheets
1(IXFx32N100X(HV) Datasheet)
Environmental Information
1(Ixys IC REACH)
Featured Product
1(1000 V Ultra-Junction X-Class HiPerFET™ Power MOSFETs)
PCN Design/Specification
1(Mult Dev MSL3 Pkg Chg 9/Jun/2020)
PCN Packaging
1(Multiple Devices MSL 09/Jun/2020)

Menge Preis

QUANTITÄT: 510
Einzelpreis: $15.27043
Verpackung: Tube
MinMultiplikator: 1
QUANTITÄT: 120
Einzelpreis: $17.895
Verpackung: Tube
MinMultiplikator: 1
QUANTITÄT: 30
Einzelpreis: $19.088
Verpackung: Tube
MinMultiplikator: 1
QUANTITÄT: 1
Einzelpreis: $23.02
Verpackung: Tube
MinMultiplikator: 1

Stellvertreter

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