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ChinaIPS65R1K0CEAKMA1
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
IPS65R1K0CEAKMA1
BESCHREIBUNG
MOSFET N-CH 650V 4.3A TO251
DETAILIERTE BESCHREIBUNG
N-Channel 650 V 4.3A (Tc) 37W (Tc) Through Hole TO-251
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
1,500
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
CoolMOS™ CE
Package
Tube
Product Status
Discontinued at allaboutcomponents.com
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
4.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id
3.5V @ 200µA
Gate Charge (Qg) (Max) @ Vgs
15.3 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
328 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
37W (Tc)
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-251
Package / Case
TO-251-3 Stub Leads, IPak
Base Product Number
IPS65R
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
2156-IPS65R1K0CEAKMA1-IT
IFEINFIPS65R1K0CEAKMA1
SP001276048
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPS65R1K0CEAKMA1
Dokumente und Medien
Datasheets
1(IPS65R1K0CE)
Other Related Documents
1(Part Number Guide)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(IPS65R1K0CE)
Scheme-It
1(IPS65R1K0CEAKMA1 Scheme-It®)
Menge Preis
-
Stellvertreter
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