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ChinaFDP10AN06A0
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
FDP10AN06A0
BESCHREIBUNG
MOSFET N-CH 60V 12A/75A TO220-3
DETAILIERTE BESCHREIBUNG
N-Channel 60 V 12A (Ta), 75A (Tc) 135W (Tc) Through Hole TO-220-3
HERSTELLER
Fairchild Semiconductor
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
211
Lagerbestände
Technische Daten
Mfr
Fairchild Semiconductor
Series
PowerTrench®
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
12A (Ta), 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
10.5mOhm @ 75A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
37 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1840 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
135W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220-3
Package / Case
TO-220-3
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
FAIFSCFDP10AN06A0
2156-FDP10AN06A0-FS
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor FDP10AN06A0
Dokumente und Medien
Datasheets
1(FDP10AN06A0)
Menge Preis
QUANTITÄT: 211
Einzelpreis: $1.42
Verpackung: Tube
MinMultiplikator: 211
Verpackung: Tube
MinMultiplikator: 211
Stellvertreter
-