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ChinaPDTA115TMB,315
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
PDTA115TMB,315
BESCHREIBUNG
TRANS PREBIAS PNP 50V 0.1A 3DFN
DETAILIERTE BESCHREIBUNG
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 180 MHz 250 mW Surface Mount DFN1006B-3
HERSTELLER
NXP USA Inc.
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
11,181
Lagerbestände
Technische Daten
Mfr
NXP USA Inc.
Series
-
Package
Bulk
Product Status
Active
Transistor Type
PNP - Pre-Biased
Current - Collector (Ic) (Max)
100 mA
Voltage - Collector Emitter Breakdown (Max)
50 V
Resistor - Base (R1)
100 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic
150mV @ 250µA, 5mA
Current - Collector Cutoff (Max)
1µA
Frequency - Transition
180 MHz
Power - Max
250 mW
Mounting Type
Surface Mount
Package / Case
SC-101, SOT-883
Supplier Device Package
DFN1006B-3
Base Product Number
PDTA115
Umweltverträgliche Exportklassifikationen
ECCN
EAR99
HTSUS
8541.21.0075
Andere Namen
2156-PDTA115TMB,315
NEXNXPPDTA115TMB,315
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors/NXP USA Inc. PDTA115TMB,315
Dokumente und Medien
Datasheets
1(PDTA115TMB,315 Datasheet)
Menge Preis
QUANTITÄT: 11181
Einzelpreis: $0.03
Verpackung: Bulk
MinMultiplikator: 11181
Verpackung: Bulk
MinMultiplikator: 11181
Stellvertreter
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