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TEILNUMMER DES HERSTELLERS
ALD1108EPCL
BESCHREIBUNG
MOSFET 4N-CH 10V 16DIP
DETAILIERTE BESCHREIBUNG
Mosfet Array 10V 600mW Through Hole 16-PDIP
HERSTELLER
Advanced Linear Devices Inc.
STANDARD LEADTIME
EDACAD-MODELL
ALD1108EPCL Models
STANDARDPAKET
Lagerbestände
Technische Daten
Mfr
Advanced Linear Devices Inc.
Series
EPAD®
Package
Tube
Product Status
Active
Technology
MOSFET (Metal Oxide)
Configuration
4 N-Channel, Matched Pair
FET Feature
-
Drain to Source Voltage (Vdss)
10V
Current - Continuous Drain (Id) @ 25°C
-
Rds On (Max) @ Id, Vgs
500Ohm @ 5V
Vgs(th) (Max) @ Id
1.01V @ 1µA
Gate Charge (Qg) (Max) @ Vgs
-
Input Capacitance (Ciss) (Max) @ Vds
25pF @ 5V
Power - Max
600mW
Operating Temperature
0°C ~ 70°C (TJ)
Mounting Type
Through Hole
Package / Case
16-DIP (0.300", 7.62mm)
Supplier Device Package
16-PDIP
Base Product Number
ALD1108
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095
California Prop 65
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/FET, MOSFET Arrays/Advanced Linear Devices Inc. ALD1108EPCL
Dokumente und Medien
Datasheets
1(ALD1108,10E)
HTML Datasheet
1(ALD1108,10E)
EDA Models
1(ALD1108EPCL Models)
Menge Preis
-
Stellvertreter
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