English
Spain
Rusia
Italy
ChinaFDP025N06
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
FDP025N06
BESCHREIBUNG
POWER FIELD-EFFECT TRANSISTOR, 1
DETAILIERTE BESCHREIBUNG
N-Channel 60 V 120A (Tc) 395W (Tc) Through Hole TO-220-3
HERSTELLER
Fairchild Semiconductor
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
119
Lagerbestände
Technische Daten
Mfr
Fairchild Semiconductor
Series
PowerTrench®
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
2.5mOhm @ 75A, 10V
Vgs(th) (Max) @ Id
4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
226 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
14885 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
395W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220-3
Package / Case
TO-220-3
Umweltverträgliche Exportklassifikationen
ECCN
EAR99
HTSUS
8542.39.0001
Andere Namen
FAIFSCFDP025N06
2156-FDP025N06
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor FDP025N06
Dokumente und Medien
Datasheets
1(FDP025N06 Datasheet)
Menge Preis
QUANTITÄT: 119
Einzelpreis: $2.54
Verpackung: Bulk
MinMultiplikator: 119
Verpackung: Bulk
MinMultiplikator: 119
Stellvertreter
-