Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
IPD65R600C6ATMA1
BESCHREIBUNG
LOW POWER_LEGACY
DETAILIERTE BESCHREIBUNG
N-Channel 650 V 7.3A (Tc) 63W (Tc) Surface Mount PG-TO252-3-313
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
2,500

Technische Daten

Mfr
Infineon Technologies
Series
CoolMOS™
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
7.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
600mOhm @ 2.1A, 10V
Vgs(th) (Max) @ Id
3.5V @ 210µA
Gate Charge (Qg) (Max) @ Vgs
23 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
440 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
63W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO252-3-313
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
Base Product Number
IPD65R

Umweltverträgliche Exportklassifikationen

Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Andere Namen

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Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPD65R600C6ATMA1

Dokumente und Medien

Datasheets
1(IPx65R600C6)
Other Related Documents
1(Part Number Guide)
HTML Datasheet
1(IPx65R600C6)
Simulation Models
1(CoolMOS™ Power MOSFET 600V C6 Spice Model)

Menge Preis

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Stellvertreter

Teil Nr. : IPD60R600P7ATMA1
Hersteller. : Infineon Technologies
Verfügbare Menge. : 4,810
Einzelpreis. : $1.22000
Ersatztyp. : Similar
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Hersteller. : STMicroelectronics
Verfügbare Menge. : 6,542
Einzelpreis. : $1.54000
Ersatztyp. : Similar
Teil Nr. : TK7P60W,RVQ
Hersteller. : Toshiba Semiconductor and Storage
Verfügbare Menge. : 1,994
Einzelpreis. : $2.04000
Ersatztyp. : Similar