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ChinaBSS139 E6327
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
BSS139 E6327
BESCHREIBUNG
MOSFET N-CH 250V 100MA SOT23-3
DETAILIERTE BESCHREIBUNG
N-Channel 250 V 100mA (Ta) 360mW (Ta) Surface Mount PG-SOT23
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
3,000
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
SIPMOS®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
250 V
Current - Continuous Drain (Id) @ 25°C
100mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)
0V, 10V
Rds On (Max) @ Id, Vgs
14Ohm @ 0.1mA, 10V
Vgs(th) (Max) @ Id
1V @ 56µA
Gate Charge (Qg) (Max) @ Vgs
3.5 nC @ 5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
76 pF @ 25 V
FET Feature
Depletion Mode
Power Dissipation (Max)
360mW (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-SOT23
Package / Case
TO-236-3, SC-59, SOT-23-3
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095
Andere Namen
BSS139E6327
BSS139 E6327-ND
BSS139E6327XT
SP000011170
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies BSS139 E6327
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