Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
IRLR3717PBF
BESCHREIBUNG
MOSFET N-CH 20V 120A DPAK
DETAILIERTE BESCHREIBUNG
N-Channel 20 V 120A (Tc) 89W (Tc) Surface Mount TO-252AA (DPAK)
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
75

Technische Daten

Mfr
Infineon Technologies
Series
HEXFET®
Package
Tube
Product Status
Discontinued at allaboutcomponents.com
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
4mOhm @ 15A, 10V
Vgs(th) (Max) @ Id
2.45V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
31 nC @ 4.5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2830 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
89W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-252AA (DPAK)
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63

Umweltverträgliche Exportklassifikationen

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Andere Namen

SP001568638
2156-IRLR3717PBF
*IRLR3717PBF
INFINFIRLR3717PBF

Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRLR3717PBF

Dokumente und Medien

Datasheets
1(IRLR3717PbF, IRLU3717PbF)
Other Related Documents
1(Part Number Guide)
Product Training Modules
()
Design Resources
1(IRLR3717PBF Saber Model)
Featured Product
1(Data Processing Systems)
PCN Packaging
1(Package Drawing Update 19/Aug/2015)
HTML Datasheet
1(IRLR3717PbF, IRLU3717PbF)
Simulation Models
1(IRLR3717PBF Spice Model)

Menge Preis

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