Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
FQP13N50C_F105
BESCHREIBUNG
MOSFET N-CH 500V 13A TO220-3
DETAILIERTE BESCHREIBUNG
N-Channel 500 V 13A (Tc) 195W (Tc) Through Hole TO-220-3
HERSTELLER
onsemi
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET

Technische Daten

Mfr
onsemi
Series
QFET®
Package
Bulk
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
500 V
Current - Continuous Drain (Id) @ 25°C
13A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
480mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
56 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
2055 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
195W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220-3
Package / Case
TO-220-3
Base Product Number
FQP1

Umweltverträgliche Exportklassifikationen

Moisture Sensitivity Level (MSL)
Not Applicable
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Andere Namen

-

Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi FQP13N50C_F105

Dokumente und Medien

Datasheets
1(FQP13N50C, FQPF13N50C)
Environmental Information
1(onsemi RoHS)
PCN Obsolescence/ EOL
1(Mult Devices 28/Feb/2017)

Menge Preis

-

Stellvertreter

Teil Nr. : IRFB13N50APBF
Hersteller. : Vishay Siliconix
Verfügbare Menge. : 1,693
Einzelpreis. : $3.36000
Ersatztyp. : Direct