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ChinaIRF520NSTRLPBF
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
IRF520NSTRLPBF
BESCHREIBUNG
MOSFET N-CH 100V 9.7A D2PAK
DETAILIERTE BESCHREIBUNG
N-Channel 100 V 9.7A (Tc) 3.8W (Ta), 48W (Tc) Surface Mount D2PAK
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
800
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
HEXFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
9.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
200mOhm @ 5.7A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
25 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
330 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
3.8W (Ta), 48W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
D2PAK
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number
IRF520
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
IRF520NSTRLPBFCT
INFINFIRF520NSTRLPBF
IRF520NSTRLPBFDKR
SP001551098
2156-IRF520NSTRLPBF
IRF520NSTRLPBFTR
IRF520NSTRLPBF-ND
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRF520NSTRLPBF
Dokumente und Medien
Datasheets
1(IRF520N(S,L)PbF)
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PCN Packaging
1(Packing Material Update 16/Sep/2016)
HTML Datasheet
1(IRF520N(S,L)PbF)
Simulation Models
1(IRF520NS Saber Model)
Menge Preis
-
Stellvertreter
Teil Nr. : IRL520NSTRLPBF
Hersteller. : Infineon Technologies
Verfügbare Menge. : 2,914
Einzelpreis. : $1.20000
Ersatztyp. : MFR Recommended
Verfügbare Menge. : 2,914
Einzelpreis. : $1.20000
Ersatztyp. : MFR Recommended