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ChinaPDTB143EUF
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TEILNUMMER DES HERSTELLERS
PDTB143EUF
BESCHREIBUNG
TRANS PREBIAS NPN 50V SOT323
DETAILIERTE BESCHREIBUNG
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 500 mA 140 MHz 300 mW Surface Mount SOT-323
HERSTELLER
NXP USA Inc.
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
8,036
Lagerbestände
Technische Daten
Mfr
NXP USA Inc.
Series
-
Package
Bulk
Product Status
Active
Transistor Type
NPN - Pre-Biased
Current - Collector (Ic) (Max)
500 mA
Voltage - Collector Emitter Breakdown (Max)
50 V
Resistor - Base (R1)
4.7 kOhms
Resistor - Emitter Base (R2)
4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce
60 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic
100mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max)
500nA
Frequency - Transition
140 MHz
Power - Max
300 mW
Mounting Type
Surface Mount
Package / Case
SC-70, SOT-323
Supplier Device Package
SOT-323
Base Product Number
PDTB143
Umweltverträgliche Exportklassifikationen
ECCN
EAR99
HTSUS
8541.21.0075
Andere Namen
NEXNXPPDTB143EUF
2156-PDTB143EUF
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors/NXP USA Inc. PDTB143EUF
Dokumente und Medien
Datasheets
1(PDTB143EU115 Datasheet)
HTML Datasheet
1(PDTB143EU115 Datasheet)
Menge Preis
QUANTITÄT: 8036
Einzelpreis: $0.04
Verpackung: Bulk
MinMultiplikator: 8036
Verpackung: Bulk
MinMultiplikator: 8036
Stellvertreter
-