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ChinaMD2009DFX
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TEILNUMMER DES HERSTELLERS
MD2009DFX
BESCHREIBUNG
TRANS NPN 700V 10A TO3PF
DETAILIERTE BESCHREIBUNG
Bipolar (BJT) Transistor NPN 700 V 10 A 58 W Through Hole TO-3PF
HERSTELLER
STMicroelectronics
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
Lagerbestände
Technische Daten
Mfr
STMicroelectronics
Series
-
Package
Tube
Product Status
Obsolete
Transistor Type
NPN
Current - Collector (Ic) (Max)
10 A
Voltage - Collector Emitter Breakdown (Max)
700 V
Vce Saturation (Max) @ Ib, Ic
2.8V @ 1.4A, 5.5A
Current - Collector Cutoff (Max)
200µA
DC Current Gain (hFE) (Min) @ Ic, Vce
5 @ 5.5A, 5V
Power - Max
58 W
Frequency - Transition
-
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-3P-3 Full Pack
Supplier Device Package
TO-3PF
Base Product Number
MD2009
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
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Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/STMicroelectronics MD2009DFX
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1(MD2009DFX)
HTML Datasheet
1(MD2009DFX)
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