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ChinaRJL5020DPK-00#T0
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
RJL5020DPK-00#T0
BESCHREIBUNG
MOSFET N-CH 500V 38A TO3P
DETAILIERTE BESCHREIBUNG
N-Channel 500 V 38A (Ta) 200W (Tc) Through Hole TO-3P
HERSTELLER
Renesas Electronics Corporation
STANDARD LEADTIME
EDACAD-MODELL
RJL5020DPK-00#T0 Models
STANDARDPAKET
Lagerbestände
Technische Daten
Mfr
Renesas Electronics Corporation
Series
-
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
500 V
Current - Continuous Drain (Id) @ 25°C
38A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
135mOhm @ 19A, 10V
Vgs(th) (Max) @ Id
-
Gate Charge (Qg) (Max) @ Vgs
140 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
4750 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
200W (Tc)
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-3P
Package / Case
TO-220-3 Full Pack
Base Product Number
RJL5020
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Affected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Renesas Electronics Corporation RJL5020DPK-00#T0
Dokumente und Medien
Datasheets
1(RJL5020DPK)
PCN Packaging
1(Label Change-All Devices 01/Dec/2022)
EDA Models
1(RJL5020DPK-00#T0 Models)
Menge Preis
-
Stellvertreter
-