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ChinaRJK0348DPA-00#J0
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
RJK0348DPA-00#J0
BESCHREIBUNG
POWER FIELD-EFFECT TRANSISTOR
DETAILIERTE BESCHREIBUNG
N-Channel 30 V 50A (Ta) 55W (Tc) Surface Mount 8-WPAK
HERSTELLER
Renesas Electronics Corporation
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
156
Lagerbestände
Technische Daten
Mfr
Renesas Electronics Corporation
Series
-
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
50A (Ta)
Rds On (Max) @ Id, Vgs
2.5mOhm @ 25A, 10V
Vgs(th) (Max) @ Id
-
Gate Charge (Qg) (Max) @ Vgs
34 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds
5100 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
55W (Tc)
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-WPAK
Package / Case
8-PowerWDFN
Umweltverträgliche Exportklassifikationen
RoHS Status
Not applicable
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
RENRNSRJK0348DPA-00#J0
2156-RJK0348DPA-00#J0
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Renesas Electronics Corporation RJK0348DPA-00#J0
Dokumente und Medien
Datasheets
1(RJK0348DPA-00#J0)
Menge Preis
QUANTITÄT: 156
Einzelpreis: $1.92
Verpackung: Bulk
MinMultiplikator: 156
Verpackung: Bulk
MinMultiplikator: 156
Stellvertreter
-