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ChinaPHPT610030NK115
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TEILNUMMER DES HERSTELLERS
PHPT610030NK115
BESCHREIBUNG
SMALL SIGNAL BIPOLAR TRANSISTOR
DETAILIERTE BESCHREIBUNG
Bipolar (BJT) Transistor Array 2 NPN 100V 3A 140MHz 1.25W Surface Mount LFPAK56D
HERSTELLER
NXP USA Inc.
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
1,192
Lagerbestände
Technische Daten
Mfr
NXP USA Inc.
Series
-
Package
Bulk
Product Status
Active
Transistor Type
2 NPN
Current - Collector (Ic) (Max)
3A
Voltage - Collector Emitter Breakdown (Max)
100V
Vce Saturation (Max) @ Ib, Ic
330mV @ 300mA, 3A
Current - Collector Cutoff (Max)
100nA
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 1A, 10V
Power - Max
1.25W
Frequency - Transition
140MHz
Operating Temperature
175°C (TJ)
Grade
Automotive
Qualification
AEC-Q101
Mounting Type
Surface Mount
Package / Case
SOT-1205, 8-LFPAK56
Supplier Device Package
LFPAK56D
Umweltverträgliche Exportklassifikationen
RoHS Status
Not applicable
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.29.0075
Andere Namen
2156-PHPT610030NK115
NEXNXPPHPT610030NK115
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays/NXP USA Inc. PHPT610030NK115
Dokumente und Medien
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1(PHPT610030NK)
HTML Datasheet
1(PHPT610030NK)
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