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China2N6849
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TEILNUMMER DES HERSTELLERS
2N6849
BESCHREIBUNG
MOSFET P-CH 100V 6.5A TO39
DETAILIERTE BESCHREIBUNG
P-Channel 100 V 6.5A (Tc) 800mW (Ta), 25W (Tc) Through Hole TO-39
HERSTELLER
Microsemi Corporation
STANDARD LEADTIME
EDACAD-MODELL
2N6849 Models
STANDARDPAKET
1
Lagerbestände
Technische Daten
Mfr
Microsemi Corporation
Series
-
Package
Bulk
Product Status
Obsolete
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
6.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
320mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
34.8 nC @ 10 V
Vgs (Max)
±20V
FET Feature
-
Power Dissipation (Max)
800mW (Ta), 25W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-39
Package / Case
TO-205AF Metal Can
Umweltverträgliche Exportklassifikationen
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
2N6849-ND
150-2N6849
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Microsemi Corporation 2N6849
Dokumente und Medien
Datasheets
1(2N6849)
Environmental Information
()
PCN Obsolescence/ EOL
()
HTML Datasheet
1(2N6849)
EDA Models
1(2N6849 Models)
Menge Preis
-
Stellvertreter
-