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ChinaIRFD220
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
IRFD220
BESCHREIBUNG
MOSFET N-CH 200V 800MA 4DIP
DETAILIERTE BESCHREIBUNG
N-Channel 200 V 800mA (Ta) 1W (Ta) Through Hole 4-HVMDIP
HERSTELLER
Vishay Siliconix
STANDARD LEADTIME
EDACAD-MODELL
IRFD220 Models
STANDARDPAKET
2,500
Lagerbestände
Technische Daten
Mfr
Vishay Siliconix
Series
-
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
800mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
800mOhm @ 480mA, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
14 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
260 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
1W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
4-HVMDIP
Package / Case
4-DIP (0.300", 7.62mm)
Base Product Number
IRFD220
Umweltverträgliche Exportklassifikationen
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix IRFD220
Dokumente und Medien
Datasheets
1(IRFD220)
PCN Obsolescence/ EOL
1(SIL-018-2015-Rev-0 20/May/2015)
HTML Datasheet
1(IRFD220)
EDA Models
1(IRFD220 Models)
Menge Preis
-
Stellvertreter
Teil Nr. : IRFD220PBF
Hersteller. : Vishay Siliconix
Verfügbare Menge. : 4,005
Einzelpreis. : $1.43000
Ersatztyp. : Direct
Verfügbare Menge. : 4,005
Einzelpreis. : $1.43000
Ersatztyp. : Direct