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ChinaIRFD110
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
IRFD110
BESCHREIBUNG
1A, 100V, 0.600 OHM, N-CHANNEL
DETAILIERTE BESCHREIBUNG
N-Channel 100 V 1A (Ta) 1.3W (Ta) Through Hole 4-DIP, Hexdip, HVMDIP
HERSTELLER
Harris Corporation
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
523
Lagerbestände
Technische Daten
Mfr
Harris Corporation
Series
-
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
540mOhm @ 600mA, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
8.3 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
180 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
1.3W (Ta)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
4-DIP, Hexdip, HVMDIP
Package / Case
4-DIP (0.300", 7.62mm)
Base Product Number
IRFD110
Umweltverträgliche Exportklassifikationen
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
0000.00.0000
Andere Namen
2156-IRFD110
HARHARIRFD110
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Harris Corporation IRFD110
Dokumente und Medien
Datasheets
1(IRFD113)
Menge Preis
QUANTITÄT: 523
Einzelpreis: $0.57
Verpackung: Bulk
MinMultiplikator: 523
Verpackung: Bulk
MinMultiplikator: 523
Stellvertreter
-