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ChinaFDW258P
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
FDW258P
BESCHREIBUNG
MOSFET P-CH 12V 9A 8TSSOP
DETAILIERTE BESCHREIBUNG
P-Channel 12 V 9A (Ta) 1.3W (Ta) Surface Mount 8-TSSOP
HERSTELLER
Fairchild Semiconductor
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
204
Lagerbestände
Technische Daten
Mfr
Fairchild Semiconductor
Series
PowerTrench®
Package
Bulk
Product Status
Obsolete
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
12 V
Current - Continuous Drain (Id) @ 25°C
9A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V
Rds On (Max) @ Id, Vgs
11mOhm @ 9A, 4.5V
Vgs(th) (Max) @ Id
1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
73 nC @ 4.5 V
Vgs (Max)
±8V
Input Capacitance (Ciss) (Max) @ Vds
5049 pF @ 5 V
FET Feature
-
Power Dissipation (Max)
1.3W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-TSSOP
Package / Case
8-TSSOP (0.173", 4.40mm Width)
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
ECCN
EAR99
HTSUS
8541.21.0095
Andere Namen
FAIFSCFDW258P
2156-FDW258P-FSTR
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor FDW258P
Dokumente und Medien
Datasheets
1(FDW258P)
Menge Preis
QUANTITÄT: 204
Einzelpreis: $1.48
Verpackung: Bulk
MinMultiplikator: 204
Verpackung: Bulk
MinMultiplikator: 204
Stellvertreter
-