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ChinaBDW83B
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
BDW83B
BESCHREIBUNG
TRANS NPN 80V 15A TO218
DETAILIERTE BESCHREIBUNG
Bipolar (BJT) Transistor NPN 80 V 15 A 130 W Through Hole TO-218
HERSTELLER
Central Semiconductor Corp
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
Lagerbestände
Technische Daten
Mfr
Central Semiconductor Corp
Series
-
Package
Bulk
Product Status
Obsolete
Transistor Type
NPN
Current - Collector (Ic) (Max)
15 A
Voltage - Collector Emitter Breakdown (Max)
80 V
Vce Saturation (Max) @ Ib, Ic
-
Current - Collector Cutoff (Max)
-
DC Current Gain (hFE) (Min) @ Ic, Vce
750 @ 6A, 3V
Power - Max
130 W
Frequency - Transition
-
Operating Temperature
-
Mounting Type
Through Hole
Package / Case
TO-218-3
Supplier Device Package
TO-218
Umweltverträgliche Exportklassifikationen
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/Central Semiconductor Corp BDW83B
Dokumente und Medien
Datasheets
1(Power Transistors TO-218 Case General Purpose)
Environmental Information
1(RoHS Cert)
Menge Preis
-
Stellvertreter
Teil Nr. : 2STW100
Hersteller. : STMicroelectronics
Verfügbare Menge. : 246
Einzelpreis. : $2.88000
Ersatztyp. : Similar
Verfügbare Menge. : 246
Einzelpreis. : $2.88000
Ersatztyp. : Similar