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ChinaFQI17P10TU
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
FQI17P10TU
BESCHREIBUNG
P-CHANNEL POWER MOSFET
DETAILIERTE BESCHREIBUNG
P-Channel 100 V 16.5A (Tc) 3.75W (Ta), 100W (Tc) Through Hole TO-262 (I2PAK)
HERSTELLER
Fairchild Semiconductor
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
544
Lagerbestände
Technische Daten
Mfr
Fairchild Semiconductor
Series
QFET™
Package
Bulk
Product Status
Active
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
16.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
190mOhm @ 8.25A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
39 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1100 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
3.75W (Ta), 100W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-262 (I2PAK)
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Umweltverträgliche Exportklassifikationen
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
2156-FQI17P10TU
FAIFSCFQI17P10TU
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor FQI17P10TU
Dokumente und Medien
Datasheets
1(FQB17P10TM)
Menge Preis
QUANTITÄT: 544
Einzelpreis: $0.55
Verpackung: Bulk
MinMultiplikator: 544
Verpackung: Bulk
MinMultiplikator: 544
Stellvertreter
-