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ChinaNDD02N60Z-1G
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
NDD02N60Z-1G
BESCHREIBUNG
MOSFET N-CH 600V 2.2A IPAK
DETAILIERTE BESCHREIBUNG
N-Channel 600 V 2.2A (Tc) 57W (Tc) Through Hole IPAK
HERSTELLER
onsemi
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
75
Lagerbestände
Technische Daten
Mfr
onsemi
Series
-
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
2.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
4.8Ohm @ 1A, 10V
Vgs(th) (Max) @ Id
4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs
10.1 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
274 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
57W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
IPAK
Package / Case
TO-251-3 Short Leads, IPAK, TO-251AA
Base Product Number
NDD02
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
NDD02N60Z-1G-ND
NDD02N60Z1G
ONSONSNDD02N60Z-1G
NDD02N60Z-1GOS
2156-NDD02N60Z-1G-ON
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi NDD02N60Z-1G
Dokumente und Medien
Datasheets
1(NDx02N60Z)
Environmental Information
()
PCN Obsolescence/ EOL
1(Mult Devices 01/Sep/2017)
PCN Assembly/Origin
1(Mult Devices 29/Aug/2017)
HTML Datasheet
1(NDx02N60Z)
Menge Preis
-
Stellvertreter
Teil Nr. : STD2HNK60Z-1
Hersteller. : STMicroelectronics
Verfügbare Menge. : 3,054
Einzelpreis. : $1.44000
Ersatztyp. : Similar
Verfügbare Menge. : 3,054
Einzelpreis. : $1.44000
Ersatztyp. : Similar