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TEILNUMMER DES HERSTELLERS
2SD655ETZ-E
BESCHREIBUNG
0.7A, 15V, NPN
DETAILIERTE BESCHREIBUNG
Bipolar (BJT) Transistor NPN 15 V 700 mA 250MHz 500 mW Through Hole TO-92
HERSTELLER
Renesas Electronics Corporation
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
3,245
Lagerbestände
Technische Daten
Mfr
Renesas Electronics Corporation
Series
-
Package
Bulk
Product Status
Active
Transistor Type
NPN
Current - Collector (Ic) (Max)
700 mA
Voltage - Collector Emitter Breakdown (Max)
15 V
Vce Saturation (Max) @ Ib, Ic
500mV @ 50mA, 500mA
Current - Collector Cutoff (Max)
1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
400 @ 150mA, 1V
Power - Max
500 mW
Frequency - Transition
250MHz
Operating Temperature
150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package
TO-92
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
0000.00.0000
Andere Namen
2156-2SD655ETZ-E
RENRNS2SD655ETZ-E
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/Renesas Electronics Corporation 2SD655ETZ-E
Dokumente und Medien
Datasheets
1(Datasheet)
Menge Preis
QUANTITÄT: 3245
Einzelpreis: $0.09
Verpackung: Bulk
MinMultiplikator: 3245
Verpackung: Bulk
MinMultiplikator: 3245
Stellvertreter
-