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ChinaAPT35GP120B2DQ2G
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TEILNUMMER DES HERSTELLERS
APT35GP120B2DQ2G
BESCHREIBUNG
IGBT 1200V 96A 543W TMAX
DETAILIERTE BESCHREIBUNG
IGBT PT 1200 V 96 A 543 W Through Hole
HERSTELLER
Microchip Technology
STANDARD LEADTIME
43 Weeks
EDACAD-MODELL
STANDARDPAKET
30
Lagerbestände
Technische Daten
Mfr
Microchip Technology
Series
POWER MOS 7®
Package
Tube
Product Status
Active
IGBT Type
PT
Voltage - Collector Emitter Breakdown (Max)
1200 V
Current - Collector (Ic) (Max)
96 A
Current - Collector Pulsed (Icm)
140 A
Vce(on) (Max) @ Vge, Ic
3.9V @ 15V, 35A
Power - Max
543 W
Switching Energy
750µJ (on), 680µJ (off)
Input Type
Standard
Gate Charge
150 nC
Td (on/off) @ 25°C
16ns/95ns
Test Condition
600V, 35A, 4.3Ohm, 15V
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-247-3 Variant
Base Product Number
APT35GP120
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
APT35GP120B2DQ2GMI-ND
APT35GP120B2DQ2GMI
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/IGBTs/Single IGBTs/Microchip Technology APT35GP120B2DQ2G
Dokumente und Medien
Datasheets
()
Environmental Information
()
HTML Datasheet
()
Product Drawings
1(T-MAX Front)
Menge Preis
QUANTITÄT: 100
Einzelpreis: $15.8
Verpackung: Tube
MinMultiplikator: 1
Verpackung: Tube
MinMultiplikator: 1
QUANTITÄT: 1
Einzelpreis: $19.46
Verpackung: Tube
MinMultiplikator: 1
Verpackung: Tube
MinMultiplikator: 1
Stellvertreter
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