English
Spain
Rusia
Italy
ChinaIXTY1N80P
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
IXTY1N80P
BESCHREIBUNG
MOSFET N-CH 800V 1A TO252
DETAILIERTE BESCHREIBUNG
N-Channel 800 V 1A (Tc) 42W (Tc) Surface Mount TO-252AA
HERSTELLER
IXYS
STANDARD LEADTIME
52 Weeks
EDACAD-MODELL
STANDARDPAKET
Lagerbestände
Technische Daten
Mfr
IXYS
Series
Polar
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
800 V
Current - Continuous Drain (Id) @ 25°C
1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
14Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
4V @ 50µA
Gate Charge (Qg) (Max) @ Vgs
9 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
250 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
42W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-252AA
Package / Case
-
Base Product Number
IXTY1
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
California Prop 65
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/IXYS IXTY1N80P
Dokumente und Medien
Datasheets
()
Environmental Information
1(Ixys IC REACH)
HTML Datasheet
1(IXTx1N80P)
Menge Preis
QUANTITÄT: 350
Einzelpreis: $1.8002
Verpackung: Tube
MinMultiplikator: 350
Verpackung: Tube
MinMultiplikator: 350
Stellvertreter
Teil Nr. : STD1NK80ZT4
Hersteller. : STMicroelectronics
Verfügbare Menge. : 232
Einzelpreis. : $1.11000
Ersatztyp. : Similar
Verfügbare Menge. : 232
Einzelpreis. : $1.11000
Ersatztyp. : Similar