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TEILNUMMER DES HERSTELLERS
AN1L3N
BESCHREIBUNG
TRANS PREBIAS PNP 50V 0.1A TO92
DETAILIERTE BESCHREIBUNG
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 250 mW Through Hole TO-92
HERSTELLER
NEC Corporation
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
1,159
Lagerbestände
Technische Daten
Mfr
NEC Corporation
Series
-
Package
Bulk
Product Status
Active
Transistor Type
PNP - Pre-Biased
Current - Collector (Ic) (Max)
100 mA
Voltage - Collector Emitter Breakdown (Max)
50 V
Resistor - Base (R1)
4.7 kOhms
Resistor - Emitter Base (R2)
10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic
200mV @ 250µA, 5mA
Current - Collector Cutoff (Max)
100nA (ICBO)
Power - Max
250 mW
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package
TO-92
Umweltverträgliche Exportklassifikationen
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.21.0095
Andere Namen
RENNECAN1L3N
2156-AN1L3N
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors/NEC Corporation AN1L3N
Dokumente und Medien
Datasheets
1(Datasheet)
Menge Preis
QUANTITÄT: 1159
Einzelpreis: $0.26
Verpackung: Bulk
MinMultiplikator: 1159
Verpackung: Bulk
MinMultiplikator: 1159
Stellvertreter
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