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ChinaAUIRL7766M2TR
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
AUIRL7766M2TR
BESCHREIBUNG
MOSFET N-CH 100V 10A DIRECTFET
DETAILIERTE BESCHREIBUNG
N-Channel 100 V 10A (Ta) 2.5W (Ta), 62.5W (Tc) Surface Mount DirectFET™ Isometric M4
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
4,800
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
HEXFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
10A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
10mOhm @ 31A, 10V
Vgs(th) (Max) @ Id
2.5V @ 150µA
Gate Charge (Qg) (Max) @ Vgs
66 nC @ 4.5 V
Vgs (Max)
±16V
Input Capacitance (Ciss) (Max) @ Vds
5305 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
2.5W (Ta), 62.5W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
DirectFET™ Isometric M4
Package / Case
DirectFET™ Isometric M4
Base Product Number
AUIRL7766
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies AUIRL7766M2TR
Dokumente und Medien
Datasheets
1(AUIRL7766M2TR(1))
Other Related Documents
1(Part Number Guide)
Product Training Modules
1(High Voltage Integrated Circuits (HVIC Gate Drivers))
Featured Product
1(Data Processing Systems)
PCN Design/Specification
1(Mult Dev Label Chgs 8/Sep/2021)
PCN Assembly/Origin
1(Mult Dev Wafer Fab 12/Feb/2019)
PCN Packaging
1(Package Drawing Update 19/Aug/2015)
HTML Datasheet
1(AUIRL7766M2TR(1))
Simulation Models
1(AUIRL7766M2 Spice Model)
Menge Preis
-
Stellvertreter
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