Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
STB24N65M2
BESCHREIBUNG
MOSFET N-CH 650V 16A D2PAK
DETAILIERTE BESCHREIBUNG
N-Channel 650 V 16A (Tc) 150W (Tc) Surface Mount D2PAK
HERSTELLER
STMicroelectronics
STANDARD LEADTIME
EDACAD-MODELL
STB24N65M2 Models
STANDARDPAKET
1,000

Technische Daten

Mfr
STMicroelectronics
Series
MDmesh™ M2
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
16A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
230mOhm @ 8A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
29 nC @ 10 V
Vgs (Max)
±25V
Input Capacitance (Ciss) (Max) @ Vds
1060 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
150W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
D2PAK
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number
STB24N

Umweltverträgliche Exportklassifikationen

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Andere Namen

497-15304-1
497-15304-2
-497-15304-1
-497-15304-2
-497-15304-6
497-15304-6

Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/STMicroelectronics STB24N65M2

Dokumente und Medien

Datasheets
1(STx24N65M2)
Product Training Modules
1(STMicroelectronics ST MOSFETs)
PCN Obsolescence/ EOL
1(Mult Dev OBS 3/Jul/2020)
PCN Assembly/Origin
1(Mult Dev Wafer Site Add 3/Aug/2018)
PCN Packaging
1(Mult Dev Inner Box Chg 9/Dec/2021)
HTML Datasheet
1(STx24N65M2)
EDA Models
1(STB24N65M2 Models)

Menge Preis

QUANTITÄT: 1
Einzelpreis: $2.64
Verpackung: Cut Tape (CT)
MinMultiplikator: 1
QUANTITÄT: 1
Einzelpreis: $2.64
Verpackung: Digi-Reel®
MinMultiplikator: 1

Stellvertreter

Teil Nr. : FCB260N65S3
Hersteller. : onsemi
Verfügbare Menge. : 6
Einzelpreis. : $3.22000
Ersatztyp. : Similar