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ChinaHUF75631S3ST
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
HUF75631S3ST
BESCHREIBUNG
MOSFET N-CH 100V 33A D2PAK
DETAILIERTE BESCHREIBUNG
N-Channel 100 V 33A (Tc) 120W (Tc) Surface Mount TO-263 (D2PAK)
HERSTELLER
Fairchild Semiconductor
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
132
Lagerbestände
Technische Daten
Mfr
Fairchild Semiconductor
Series
-
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
33A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
40mOhm @ 33A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
79 nC @ 20 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1220 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
120W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-263 (D2PAK)
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Umweltverträgliche Exportklassifikationen
ECCN
EAR99
HTSUS
8542.39.0001
Andere Namen
FAIFSCHUF75631S3ST
2156-HUF75631S3ST
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor HUF75631S3ST
Dokumente und Medien
Datasheets
1(HUF75631S3ST Datasheet)
Menge Preis
QUANTITÄT: 132
Einzelpreis: $2.29
Verpackung: Bulk
MinMultiplikator: 132
Verpackung: Bulk
MinMultiplikator: 132
Stellvertreter
-