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ChinaC3M0021120K
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
C3M0021120K
BESCHREIBUNG
SICFET N-CH 1200V 100A TO247-4L
DETAILIERTE BESCHREIBUNG
N-Channel 1200 V 100A (Tc) 469W (Tc) Through Hole TO-247-4L
HERSTELLER
Wolfspeed, Inc.
STANDARD LEADTIME
30 Weeks
EDACAD-MODELL
C3M0021120K Models
STANDARDPAKET
30
Lagerbestände
Technische Daten
Mfr
Wolfspeed, Inc.
Series
C3M™
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
15V
Rds On (Max) @ Id, Vgs
28.8mOhm @ 50A, 15V
Vgs(th) (Max) @ Id
3.6V @ 17.7mA
Gate Charge (Qg) (Max) @ Vgs
162 nC @ 15 V
Vgs (Max)
+15V, -4V
Input Capacitance (Ciss) (Max) @ Vds
4818 pF @ 1000 V
FET Feature
-
Power Dissipation (Max)
469W (Tc)
Operating Temperature
-40°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247-4L
Package / Case
TO-247-4
Base Product Number
C3M0021120
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Affected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
1697-C3M0021120K
-3312-C3M0021120K
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Wolfspeed, Inc. C3M0021120K
Dokumente und Medien
Datasheets
1(C3M0021120K)
Featured Product
()
PCN Design/Specification
()
PCN Assembly/Origin
1(wafer fab change 10/17/2023)
Article Library
1(Use SiC-Based MOSFETs to Improve Power Conversion Efficiency)
EDA Models
1(C3M0021120K Models)
Menge Preis
QUANTITÄT: 120
Einzelpreis: $32.08367
Verpackung: Tube
MinMultiplikator: 1
Verpackung: Tube
MinMultiplikator: 1
QUANTITÄT: 30
Einzelpreis: $34.37533
Verpackung: Tube
MinMultiplikator: 1
Verpackung: Tube
MinMultiplikator: 1
QUANTITÄT: 1
Einzelpreis: $41.02
Verpackung: Tube
MinMultiplikator: 1
Verpackung: Tube
MinMultiplikator: 1
Stellvertreter
-