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ChinaSPP20N60S5HKSA1
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
SPP20N60S5HKSA1
BESCHREIBUNG
HIGH POWER_LEGACY
DETAILIERTE BESCHREIBUNG
N-Channel 600 V 20A (Tc) 208W (Tc) Through Hole PG-TO220-3-1
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
500
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
CoolMOS™
Package
Tube
Product Status
Discontinued at allaboutcomponents.com
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
190mOhm @ 13A, 10V
Vgs(th) (Max) @ Id
5.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
103 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
3000 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
208W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO220-3-1
Package / Case
TO-220-3
Base Product Number
SPP20N
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies SPP20N60S5HKSA1
Dokumente und Medien
Datasheets
1(SPP20N60S5)
Other Related Documents
1(Part Number Guide)
HTML Datasheet
1(SPP20N60S5)
Menge Preis
-
Stellvertreter
Teil Nr. : SPP20N60S5XKSA1
Hersteller. : Infineon Technologies
Verfügbare Menge. : 3,452
Einzelpreis. : $5.75000
Ersatztyp. : Parametric Equivalent
Verfügbare Menge. : 3,452
Einzelpreis. : $5.75000
Ersatztyp. : Parametric Equivalent
Teil Nr. : FCP20N60
Hersteller. : onsemi
Verfügbare Menge. : 3,961
Einzelpreis. : $5.25000
Ersatztyp. : Similar
Verfügbare Menge. : 3,961
Einzelpreis. : $5.25000
Ersatztyp. : Similar