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ChinaBSC017N04NSGATMA1
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
BSC017N04NSGATMA1
BESCHREIBUNG
MOSFET N-CH 40V 30A/100A TDSON
DETAILIERTE BESCHREIBUNG
N-Channel 40 V 30A (Ta), 100A (Tc) 2.5W (Ta), 139W (Tc) Surface Mount PG-TDSON-8-1
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
5,000
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
OptiMOS™
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
40 V
Current - Continuous Drain (Id) @ 25°C
30A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.7mOhm @ 50A, 10V
Vgs(th) (Max) @ Id
4V @ 85µA
Gate Charge (Qg) (Max) @ Vgs
108 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
8800 pF @ 20 V
FET Feature
-
Power Dissipation (Max)
2.5W (Ta), 139W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TDSON-8-1
Package / Case
8-PowerTDFN
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
SP000394684
IFEINFBSC017N04NSGATMA1
BSC017N04NS GTR
BSC017N04NS GDKR
BSC017N04NS GDKR-ND
BSC017N04NSGATMA1CT
BSC017N04NS G
BSC017N04NS GCT-ND
BSC017N04NSG
BSC017N04NS G-ND
BSC017N04NS GCT
2156-BSC017N04NSGATMA1
BSC017N04NS GTR-ND
BSC017N04NSGATMA1TR
BSC017N04NSGATMA1DKR
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies BSC017N04NSGATMA1
Dokumente und Medien
Datasheets
1(BSC017N04NS G)
Other Related Documents
1(Part Number Guide)
Featured Product
1(Data Processing Systems)
PCN Other
1(Multiple Changes 09/Jul/2014)
HTML Datasheet
1(BSC017N04NS G)
Simulation Models
1(MOSFET OptiMOS™ 40V N-Channel Spice Model)
Menge Preis
-
Stellvertreter
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Hersteller. : Infineon Technologies
Verfügbare Menge. : 6,300
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