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ChinaTSM2311CX-01 RFG
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
TSM2311CX-01 RFG
BESCHREIBUNG
MOSFET P-CH 20V 4A SOT23
DETAILIERTE BESCHREIBUNG
P-Channel 20 V 4A (Ta) 900mW (Ta) Surface Mount SOT-23
HERSTELLER
Taiwan Semiconductor Corporation
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
1
Lagerbestände
Technische Daten
Mfr
Taiwan Semiconductor Corporation
Series
-
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V
Rds On (Max) @ Id, Vgs
55mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id
1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
9 nC @ 4.5 V
Vgs (Max)
±8V
Input Capacitance (Ciss) (Max) @ Vds
640 pF @ 6 V
FET Feature
-
Power Dissipation (Max)
900mW (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
SOT-23
Package / Case
TO-236-3, SC-59, SOT-23-3
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
3 (168 Hours)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Taiwan Semiconductor Corporation TSM2311CX-01 RFG
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Menge Preis
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Stellvertreter
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