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China2SJ661-1E
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
2SJ661-1E
BESCHREIBUNG
MOSFET P-CH 60V 38A TO262-3
DETAILIERTE BESCHREIBUNG
P-Channel 60 V 38A (Ta) 1.65W (Ta), 65W (Tc) Through Hole TO-262-3
HERSTELLER
onsemi
STANDARD LEADTIME
EDACAD-MODELL
2SJ661-1E Models
STANDARDPAKET
50
Lagerbestände
Technische Daten
Mfr
onsemi
Series
-
Package
Tube
Product Status
Obsolete
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
38A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4V, 10V
Rds On (Max) @ Id, Vgs
39mOhm @ 19A, 10V
Vgs(th) (Max) @ Id
-
Gate Charge (Qg) (Max) @ Vgs
80 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
4360 pF @ 20 V
FET Feature
-
Power Dissipation (Max)
1.65W (Ta), 65W (Tc)
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-262-3
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Base Product Number
2SJ661
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
2156-2SJ661-1E
ONSONS2SJ661-1E
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi 2SJ661-1E
Dokumente und Medien
Datasheets
1(2SJ661)
Environmental Information
()
PCN Obsolescence/ EOL
1(Mult Dev EOL 08/Jul/2021)
PCN Assembly/Origin
1(Mult Dev Assembly/Mold Chg 20/Mar/2019)
HTML Datasheet
1(2SJ661)
EDA Models
1(2SJ661-1E Models)
Menge Preis
-
Stellvertreter
Teil Nr. : FQP47P06
Hersteller. : onsemi
Verfügbare Menge. : 0
Einzelpreis. : $3.25000
Ersatztyp. : Similar
Verfügbare Menge. : 0
Einzelpreis. : $3.25000
Ersatztyp. : Similar