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Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
PMXB65UPE147
BESCHREIBUNG
P-CHANNEL MOSFET
DETAILIERTE BESCHREIBUNG
P-Channel 12 V 3.2A (Ta) 317mW (Ta), 8.33W (Tc) Surface Mount DFN1010D-3
HERSTELLER
NXP USA Inc.
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
5,495
Lagerbestände
Technische Daten
Mfr
NXP USA Inc.
Series
-
Package
Bulk
Product Status
Active
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
12 V
Current - Continuous Drain (Id) @ 25°C
3.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.2V, 4.5V
Rds On (Max) @ Id, Vgs
72mOhm @ 3.2A, 4.5V
Vgs(th) (Max) @ Id
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
12 nC @ 4.5 V
Vgs (Max)
±8V
Input Capacitance (Ciss) (Max) @ Vds
634 pF @ 6 V
FET Feature
-
Power Dissipation (Max)
317mW (Ta), 8.33W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
DFN1010D-3
Package / Case
3-XDFN Exposed Pad
Umweltverträgliche Exportklassifikationen
RoHS Status
Not applicable
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.21.0095
Andere Namen
2156-PMXB65UPE147
NEXNEXPMXB65UPE147
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/NXP USA Inc. PMXB65UPE147
Dokumente und Medien
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HTML Datasheet
1(PMXB65UPE)
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