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ChinaPMV65UN,215
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
PMV65UN,215
BESCHREIBUNG
MOSFET N-CH 20V 2.2A TO236AB
DETAILIERTE BESCHREIBUNG
N-Channel 20 V 2.2A (Ta) 310mW (Ta), 2.17W (Tc) Surface Mount SOT-23 (TO-236AB)
HERSTELLER
NXP USA Inc.
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
3,000
Lagerbestände
Technische Daten
Mfr
NXP USA Inc.
Series
-
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
2.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V
Rds On (Max) @ Id, Vgs
76mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
3.9 nC @ 4.5 V
Vgs (Max)
±8V
Input Capacitance (Ciss) (Max) @ Vds
183 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
310mW (Ta), 2.17W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
SOT-23 (TO-236AB)
Package / Case
TO-236-3, SC-59, SOT-23-3
Base Product Number
PMV6
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
568-10837-1
PMV65UN,215-ND
NEXNXPPMV65UN,215
2156-PMV65UN,215-ND
568-10837-2
934066505215
568-10837-6
2156-PMV65UN215-NXTR-ND
2156-PMV65UN215
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/NXP USA Inc. PMV65UN,215
Dokumente und Medien
Datasheets
1(PMV65UN Datasheet)
Environmental Information
()
PCN Obsolescence/ EOL
1(MCU Dip Supply Situation 12/May/2015)
PCN Packaging
1(All Dev Label Update 15/Dec/2020)
HTML Datasheet
1(PMV65UN Datasheet)
Menge Preis
-
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