English
Spain
Rusia
Italy
China2N5430
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
2N5430
BESCHREIBUNG
TRANS NPN 100V 7A TO66
DETAILIERTE BESCHREIBUNG
Bipolar (BJT) Transistor NPN 100 V 7 A 30MHz 40 W Through Hole TO-66
HERSTELLER
Central Semiconductor Corp
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
500
Lagerbestände
Technische Daten
Mfr
Central Semiconductor Corp
Series
-
Package
Box
Product Status
Obsolete
Transistor Type
NPN
Current - Collector (Ic) (Max)
7 A
Voltage - Collector Emitter Breakdown (Max)
100 V
Vce Saturation (Max) @ Ib, Ic
-
Current - Collector Cutoff (Max)
-
DC Current Gain (hFE) (Min) @ Ic, Vce
-
Power - Max
40 W
Frequency - Transition
30MHz
Operating Temperature
-
Mounting Type
Through Hole
Package / Case
TO-213AA, TO-66-2
Supplier Device Package
TO-66
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0075
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/Central Semiconductor Corp 2N5430
Dokumente und Medien
Datasheets
1(Power Transistors, TO-66 Case)
Environmental Information
1(RoHS Cert)
PCN Obsolescence/ EOL
1(CP219/2N5 21/Sep/2019)
HTML Datasheet
1(Power Transistors, TO-66 Case)
Menge Preis
-
Stellvertreter
-