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ChinaFDMS86152
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
FDMS86152
BESCHREIBUNG
POWER FIELD-EFFECT TRANSISTOR, 1
DETAILIERTE BESCHREIBUNG
N-Channel 100 V 14A (Ta), 45A (Tc) 2.7W (Ta), 125W (Tc) Surface Mount 8-PQFN (5x6)
HERSTELLER
Fairchild Semiconductor
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
114
Lagerbestände
Technische Daten
Mfr
Fairchild Semiconductor
Series
PowerTrench®
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
14A (Ta), 45A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
6mOhm @ 14A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
50 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
3370 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
2.7W (Ta), 125W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-PQFN (5x6)
Package / Case
8-PowerTDFN
Umweltverträgliche Exportklassifikationen
ECCN
EAR99
HTSUS
8542.39.0001
Andere Namen
FAIFSCFDMS86152
2156-FDMS86152
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor FDMS86152
Dokumente und Medien
Datasheets
1(Datasheet)
Menge Preis
QUANTITÄT: 114
Einzelpreis: $2.64
Verpackung: Bulk
MinMultiplikator: 114
Verpackung: Bulk
MinMultiplikator: 114
Stellvertreter
-