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Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
FDN352AP
BESCHREIBUNG
SMALL SIGNAL FIELD-EFFECT TRANSI
DETAILIERTE BESCHREIBUNG
P-Channel 30 V 1.3A (Ta) 500mW (Ta) Surface Mount SOT-23-3
HERSTELLER
Fairchild Semiconductor
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
2,094
Lagerbestände
Technische Daten
Mfr
Fairchild Semiconductor
Series
PowerTrench®
Package
Bulk
Product Status
Active
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
1.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
180mOhm @ 1.3A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
1.9 nC @ 4.5 V
Vgs (Max)
±25V
Input Capacitance (Ciss) (Max) @ Vds
150 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
500mW (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
SOT-23-3
Package / Case
TO-236-3, SC-59, SOT-23-3
Base Product Number
FDN352
Umweltverträgliche Exportklassifikationen
ECCN
EAR99
HTSUS
8541.21.0095
Andere Namen
ONSONSFDN352AP
2156-FDN352AP
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor FDN352AP
Dokumente und Medien
Datasheets
1(Datasheet)
Menge Preis
QUANTITÄT: 2094
Einzelpreis: $0.14
Verpackung: Bulk
MinMultiplikator: 2094
Verpackung: Bulk
MinMultiplikator: 2094
Stellvertreter
-